Speaker
Agnes Granier
Description
See the full Abstract at http://ocs.ciemat.es/EPS2018ABS/pdf/I2.305.pdf
Influence of plasma pulsing on active species kinetics in low pressure
radiofrequency ICP plasmas
A. Granier1, A. Bousquet2, M. Mitronika1, L. Stafford3, S. Bulou4,
M. Richard-Plouet1, A. Goullet1
1
Institut des Matériaux Jean Rouxel, IMN, Nantes, France
2
Institut de Chimie de Clermont-Ferrand, ICCF, Clermont-Ferrand, France
3
Université de Montréal, Montréal, Québec, Canada
4
Luxembourg Institute of Science and Technology, LIST, Belvaux, Luxembourg
There is an increasing interest in developing surface treatment processes close to room
temperature, for instance for flexible electronics. Pulsed Plasma Enhanced Chemical Vapor
deposition (PECVD) is one route to reduce the deposition temperature of thin films. Thin
films generally deposited above 300°C were shown to be successfully deposited on thermally
sensitive substrates such as polymeric films. The challenge is to control the density and
kinetics of active species (ions and radicals) so that thin films with the properties of films
usually deposited at high temperature may be obtained at much lower temperature.
Radiofrequency inductively coupled plasmas (ICP) operated in pulse mode (at a frequency in
between 200 Hz and 5 kHz) were previously shown to deposit dense SiO2 films at low
temperature. It was furthermore recently shown to allow the deposition of nanocrystallized
anatase TiO2 photocatalytic films on polymeric substrates at T < 80°C, whereas anatase is
usually obtained above 300°C.
The density and kinetics of charged species (electrons and positive ions) and oxygen atoms
have been investigated by Langmuir probe and time resolved optical emission spectroscopy
in pulsed low pressure rf ICP plasmas created in pure oxygen and oxygen/organometallic
vapour mixtures. Hexamethyldisiloxane (HMDSO) and titanium isopropoxyde (TTIP)
organometallic precursors, used for SiO2 and TiO2 deposition respectively, are investigated.
The respective roles of electrons and oxygen atoms in the dissociation of the organosilicon
precursor are discussed in detail.
