Speaker
Satoshi Hamaguchi
Description
See the full Abstract at http://ocs.ciemat.es/EPS2018ABS/pdf/I1.301.pdf
Challenges for the development of plasma-based atomic layer processing
− numerical and experimental analyses of
plasma-exposed surface reactions at the atomic level
Satoshi Hamaguchi and Kazuhiro Karahashi
Center for Atomic and Molecular Technologies, Osaka University, Osaka, Japan
As the sizes of semiconductor devices continue to diminish and are now approaching atomic
scales, the downsizing of transistors following Moore’s law is bound to end in the near future.
The continuing market demand for higher performance and lower energy consumption of
large-scale integrated (LSI) circuits therefore necessitates further innovation in
semiconductor technologies. For example, new device technologies such as
three-dimensional (3D) device structures and devices based on non-silicon materials have
been invented to circumvent the requirement of further device miniaturization. The precise
control of device structures at the atomic level over a large area is crucial for the
manufacturing of such devices and atomic layer processes, i.e., atomic layer deposition
(ALD) and atomic layer etching (ALE), are considered to be some of the most effective
means to achieve such goals. Unlike conventional deposition or etching processes, an atomic
layer process requires self-limiting reactions, i.e., surface reactions that limit the process only
to (essentially) a monolayer in each process cycle and therefore allow a highly uniform
process over a large area. The exact surface reaction mechanisms that allow the self-limiting
processes, however, have not been well understood. In this work, we discuss our recent study
on molecular dynamics (MD) simulations for plasma-based ALE processes for SiO2 and SiN
as well as beam-based experimental study on surface chemical reactions of low-energy
incident reactive species with surfaces of Si-based materials and metals. Such analyses can
give insight into the mechanisms of self-limiting surface reactions.
