Speaker
Ilya Abramov
Description
See the full Abstract at http://ocs.ciemat.es/EPS2018ABS/pdf/P2.3021.pdf
Source of extreme ultraviolet light based on expanding jet
of dense plasma supported by microwaves: theory and modelling
I. S. Abramov, A. G. Shalashov, E. D. Gospodchikov, A. V. Sidorov, A. V. Vodopyanov
Institute of Applied Physics RAS, Nizhny Novgorod, Russia
Transition to exposure using the extreme ultraviolet (EUV) radiation is vital for the
development of next-generation projection lithography for the semiconductor industry [1].
The only practical method of EUV light generation is based on a line radiation of multiply
charged ions considering that stripping causes a shift of the ion emission spectrum towards
the shorter wavelengths for highly ionized charge-states. The most successful projects use
evaporation of Sn droplets in a focused laser beam [2]. In this paper, inspired by the
success of recent experiments in the Institute of Applied Physics [3, 4], we discuss a new
advantageous concept of EUV light sources, based on the expanding jet of dense plasma of
heavy noble gases (Xe, Ar) supported by high-power microwaves. Basing on a quasi-one-
dimensional theory of plasma flows with varying charge-state composition [5, 6], we
develop a numerical model of the EUV radiating jet [7]. The results of modelling are used
for the analysis of recent experimental data and exploration of physical constraints for next
generation devices.
The work is supported by Russian Foundation for Basic Research (grant No. 17-02-00173).
References
[1] V. Bakshi, EUV Sources for lithography (SPIE press, 2006).
[2] H. Mizoguchi et al., Proc. of SPIE 10143, 101431J-1 (2017).
[3] M. Y. Glyavin et al., Applied Physics Letters 105(17), 174101 (2014).
[4] A. V. Vodopyanov, EPJ Web of Conferences 149, 02009 (2017).
[5] I. S. Abramov et al., Radiophysics and Quantum Electronics 58, 914 (2016).
[6] A. G. Shalashov et al., JETP 123, 219 (2016).
[7] I. S. Abramov et al., arXiv:1712.10026 (2018).
